Ellipsometer_Metrology _yuray-tech

Ellipsometer

Spectroscopic ellipsometry measures thin-film thickness and optical constants on silicon and glass wafers, non-contact, for process monitoring and QA.
Application Scenarios: Film thickness measurement, refractive index testing, optical metrology.
Classic Standard: ASTM E1893 / SEMI MF534.
Charging Standard: 600 RMB per point.

≤ 0.1 nm
Thickness Precision
190 – 1700 nm
Wavelength Range
n, k, d
Measured Parameters
Mapping
Wafer Uniformity
600 RMB/point
Pricing

OVERVIEW

YURAY provides spectroscopic ellipsometry services for non-destructive thin-film characterization including thickness measurement, refractive index (n), extinction coefficient (k), and optical dispersion analysis. Our spectroscopic ellipsometer covers deep-UV to near-infrared wavelengths, enabling precise characterization of dielectric films, metal layers, semiconductors, and optical coatings on silicon, glass, and compound semiconductor substrates. We support single-point measurement and full-wafer mapping for process uniformity monitoring and quality assurance.

600 RMB/point
Pricing

SERVICES

Our ellipsometry platform enables accurate thin-film metrology — from ultra-thin ALD layers to thick dielectric films — with comprehensive optical constant characterization and mapping capabilities for process development and production monitoring.

Thin-Film Thickness & Optical Constants

Precise measurement of thin-film thickness and optical constants (n, k) using spectroscopic ellipsometry — supporting single-layer and multi-layer film stacks with advanced modeling for dielectric, metal, and semiconductor materials.

TECHNICAL SPECIFICATIONS
Parameter Specification
Thickness Range0.1 nm – 50 μm
Thickness Precision≤ 0.1 nm
Wavelength Range190 – 1700 nm
Refractive Index (n)1.0 – 5.0 range
Extinction Coef. (k)0 – 5.0 range
Film TypesDielectric, metal, semiconductor
Sample Size4 / 6 / 8 / 12 inch

Wafer Mapping & Uniformity

Full-wafer ellipsometric mapping for thickness and optical constant uniformity analysis — enabling process monitoring, center-to-edge variation assessment, and film-quality verification across the entire substrate.

TECHNICAL SPECIFICATIONS
Parameter Specification
Wafer Size4 / 6 / 8 / 12 inch
Mapping PointsUp to 121 points
Spot Size≥ 50 μm
Uniformity OutputWIWNU, range, σ
Mapping ModesThickness / n / k mapping
Measurement Speed≤ 5 sec per point
Contour Maps2D color contour plots
600 RMB/point
Pricing

CASE STUDY

At YURAY, we provide end-to-end full-chain metrology services. Below is a detailed look at how we translate stringent customer Statement of Work (SOW) requirements into delivered, proven ellipsometry characterization results.

[end-to-end service]

ALD AlOₓ Film Thickness & Optical Constant Characterization

Key Process
  • Spectroscopic ellipsometry (190–1700 nm)
Additional Processing
  • Sample Supply — 12-inch glass with ALD AlOₓ coating, incoming inspection and sample identification
  • Cauchy / Tauc-Lorentz model fitting
  • UV absorption analysis
  • 49-point full-wafer mapping
  • Analysis — Full-wavelength dispersion analysis
Key Specifications
  • 12-inch glass supported
  • Thickness: 19.8 nm (center)
  • n = 2.32 @ 270 nm
  • k < 0.001 @ 270 nm
  • Uniformity: 1.4% (within wafer)
  • Dispersion curves (190–1700 nm) delivered
Key Deliverables
  • Spectra, data, and maps consolidated
  • Final ellipsometry report delivered
[end-to-end service]

Multi-Layer Dielectric Stack Ellipsometry

Key Process
  • Multi-layer model (Si substrate + SiO₂ + SiN)
Additional Processing
  • Sample Supply — 8-inch Si wafer with SiN/SiO₂ stack, incoming inspection and sample preparation
  • Multi-layer regression analysis
  • Dispersion model for SiN film
  • 25-point across-wafer mapping
  • Analysis — MSE (mean squared error) analysis
Key Specifications
  • 8-inch Si wafer supported
  • SiN: 45.2 nm
  • SiO₂: 100.8 nm
  • n = 2.05 @ 633 nm
  • SiN uniformity: 1.2%
  • MSE < 5 (excellent fit)
Key Deliverables
  • Model, spectra, thickness data, and maps integrated
  • Final ellipsometry report delivered


METROLOGY & QUALITY ASSURANCE

Reliable Deposition Quality, Complimentary Characterization Included At YURAY, deposition service means more than simply depositing a film. We combine qualified equipment, controlled processes, experienced engineering support, and rigorous quality management to deliver stable, repeatable thin-film performance. Every project can be supported with a free comprehensive characterization report, providing customers with transparent and actionable quality data. Depending on the service requirements, reports may include film thickness, uniformity, surface condition, adhesion, composition, and other relevant characterization results. Choose YURAY for high-quality film deposition, responsive technical support, and verified results—without additional reporting costs

SOW Requirements

Quantified SOW Requirements

YURAY converts SOW requirements into measurable criteria, defining clear quality targets and inspection standards.

Process Improvement

Continuous Process Improvement

YURAY identifies root causes of issues, such as interface peeling, and implements effective corrective solutions.

Characterization Reports

SOW-Aligned Characterization Reports

YURAY delivers characterization reports with indicators directly aligned to SOW requirements for transparent verification.

Third-Party Confirmation

Third-Party Double Confirmation

YURAY uses independent third-party laboratories to double-confirm critical indicators through characterization and inspection.



Need a Custom Wafer or Fabrication Process?

Share your drawings, wafer specifications, or project requirements — our engineering team will prepare a technical proposal and quote within one business day.